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CC5401 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CC5401
(9AW)
TO-92
BCE
MARKING : CC
5401
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
VCEO
Collector -Base Voltage
VCBO
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @Ta=25 degC
PD
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
PD
Derate Above 25 deg C
Junction Temperature
Tj
Storage Temperature
Tstg
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
Junction to Ambient
Rth(j-a)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Emitter Voltage
VCEO* IC=1uA,IB=0
150
Collector -Base Voltage
VCBO
IC=100uA.IE=0
160
Emitter -Base Voltage
VEBO
IE=10uA, IC=-0
5.0
Collector-Cut off Current
ICBO
VCB=160V, IE=0
-
VALUE
150
160
5.0
600
625
5.0
1.5
12
150
-55 to +150
83.3
200
TYP
-
-
-
-
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
50
UNIT
V
V
V
nA
Emitter-Cut off Current
DC Current Gain
Ta=100 deg C
VCB=160V, IE=0
-
ICEO
VCE=150V, IB=0
IEBO
VEB=4V, IC=0
-
hFE*
IC=1mA,VCE=5V
50
IC=10mA,VCE=5V
80
IC=50mA,VCE=5V
50
-
50
uA
1.0
uA
-
50
nA
-
-
-
320
-
-
Continental Device India Limited
Data Sheet
Page 1 of 3