CC327 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CC327, CC327A, CC328 (PNP)
CC337, CC337A, CC338 (NPN)
TO-92
BCE
ECB
Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak
Emitter Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C
Operating & Storage Junction
Temperature Range
THERMAL RESISTANCE
From Junction to Ambient in Free Air
VCE0
VCES
VEBO
IC
ICM
IEM
IB
IBM
PTA
Tj, Tstg
Rth(j-a)
CC327
CC337
45
50
CC327A
CC337A
60
60
5.0
500
1.0
1.0
100
200
625
5
-65 to +150
CC328
CC338
25
30
UNITS
V
V
V
mA
A
A
mA
mA
mW
mW/deg C
deg C
200
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CC327
CC337
Collector -Emitter Voltage
VCEO IC=10mA,IB=0
>45
VCES
IC=100uA.IE=0
>50
Emitter-Base Voltage
VEBO
IE=10uA, IC=0
Collector-Cut off Current
ICBO
VCB=20V, IE=0
VCB=20V, IE=0, Tj=150 deg C
Emitter Cut off Current
IEBO
VEB=5V, IC=0
CC327A CC328
CC337A CC338
>60
>25
>60
>30
>5.0
<100
<5.0
<10
UNITS
V
V
V
nA
uA
uA
Continental Device India Limited
Data Sheet
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