C45C5 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTORS
C45C5,11
TO-220
Designed for Various Specific and General Purpose Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
C45C5
C45C11
Collector -Emitter Voltage
VCEO
45
80
Collector -Emitter Voltage
VCES
55
90
Emitter Base Voltage
VEBO
5
5
Collector Current Continuous
IC
4
4
Peak*
ICM
6
6
Base Current
IB
2
2
Power Dissipation @ Ta=25 deg C
PD
1.67
1.67
Power Dissipation @ Tc=25 deg C
30
30
Operating and Storage Junction
Tj, Tstg
-55 to +150 55 to +150
Temprature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
75
75
Junction to Case
Rth(j-c)
4.2
4.2
ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Sustaining Voltage
VCEO(sus)* IC=100mA, IB=0
C45C5
45
-
C45C11
80
-
Collector Cutt off Current
ICES
VCE=Rated VCES
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
Collector Emitter Saturation Voltage
VCE(Sat)* IC=1A, IB=50mA
-
-
Base Emitter Saturation Voltage
VBE(Sat)* IC=1A, IB=100mA
-
-
Dc Current Gain
hFE*
IC=0.2A, VCE=1V
40
-
IC=1A, VCE=1V
20
-
Dynamic Characteristics
Transition Frequency
ft
VCE=4V, IC=20mA
-
40
Collector Output Capacitance
Ccbo
VCB=10V, IE=0
-
-
f=1MHz
Switching Time
Delay Time
td +tr
-
50
Rise Time
IC= 1A, IB1=1B2
Storage Time
ts
0.1A, VCC=30V,
-
500
Fall Time
tf
tp=25 usec
-
50
*Pulse Test Pulse Width =300ms, Duty Cycle=2%
MAX
-
-
10
100
0.5
1.3
120
-
-
125
-
-
-
UNIT
V
V
V
A
A
A
W
W
deg C
deg C
deg C
UNIT
V
V
uA
uA
V
V
MHz
pF
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 3