C44C8 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTORS
C44C8, C44C11
TO - 220
Plastic Package
Medium Power Switching and Amplifier Applications
Complementary C45C Series
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector- Emitter Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current Continuous
Peak *
Base Current Continuous
Power Dissipation T_A=25ºC
T_C=25ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
P_D
T_{j, Tstg}
C44C8
C44C11
70
90
60
80
5
4
6
2
1.67
30
-55 to +150
Thermal Resistance
Junction to Ambient
Junction to Case
R_th (j-a)
75
R_th (j-c)
4.2
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector- Emitter Sustaing Voltage V_CEO(sus)* I_C=100mA, I_B=0
C44C8 60
C44C11 80
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I_CES V_CE=Rated V_CES
-
I_EBO V_EB=5V, I_C=0
-
h_FE* I_C=0.2A, V_CE=1V
100
I_C=2A, V_CE=1V
20
Collector Emitter Saturation Voltage V_{CE(sat) *} I_C=1A, I_B=50mA
-
Base Emitter Saturation Voltage
V_{BE(sat) *} I_C=1A, I_B=100mA
-
Dynamic Characteristics
Collector Capacitance
Current Gain Bandwidth Product
C_cbo V_CB=10V, I_E=0
-
f=1MHz
f_T V_CE=4V, I_C=20mA
-
Switching Characteristics
DESCRIPTION
SYMBOL TEST CONDITION MIN
-
-
-
-
-
-
-
-
-
50
TYP
Delay Time + Rise Time
t_d + t_r I_C=1A, I_B1=1_B2=0.1A -
100
Storage Time
t_s V_CC=30V, tp=25µs
500
Fall Time
t_f
-
75
* Pulse Test Pulse Width =300ms, Duty Cycle<2%
UNIT
V
V
V
A
A
W
ºC
ºC/W
ºC/W
MAX UNIT
-
V
-
V
10
µA
100
µA
220
-
0.5
V
1.3
V
100
pF
-
MHz
MAX UNIT
-
ns
-
ns
-
ns
Continental Device India Limited
Data Sheet
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