C13003 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
C13003
TO126
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ Ta=25^oC
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Rth _(j-c)
Rth _(j-a)
Maximum Lead Temperature for Soldering
TL
Purposes: 1/8" from Case for 5 Seconds.
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-65 to +150
3.12
89
275
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Collector-Cuttoff Current
Emitter-Cuttoff Current
SYMBOL TEST CONDITION
MIN TYP MAX
V_CBO I_C=1mA, I_E=0
600 -
-
V_CEO(sus)* I_C=10mA, I_B=0
I_CBO V_CB=600V, I_E=0
400 -
-
-
- 1.0
VCB=600V, IE=0,TC=100ºC -
- 5.0
I_EBO V_EB=9V, I_C=0
-
- 1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4