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| C100 Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
C100
D100
PNP
NPN
TO-92
Plastic Package
CB E
These are complementary transistors for medium power voltage and current amplifier
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
VCBO
60
Collector Emitter Voltage
VCER
50
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
1
Power Dissipation @ Ta=25ºC
Power Dissipation @ Tc=25ºC
Operating And Storage Junction
Temperature Range
PD
Tj, Tstg
500
800
-55 to +150
UNITS
V
V
V
A
mW
ºC
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-
Ambient
Thermal Resistance Junction-to-Case
Rth(j-a)
Rth(j-c)
250
156.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
Collector Emitter Voltage
VCBO
IC=100µA,IE=0
60
VCER*
IC=10mA,RBE=1Kâ¦
50
Emitter Base Voltage
VEBO
IE=100µA, IC=0
5
Collector Cut off Current
ICBO
VCB=40V, IE = 0
Emitter Cut off Current
IEBO
VBE=4V, IC = 0
DC Current Gain
hFE*
VCE=1V, IC=150mA
50
Collector-Emitter Saturation Voltage VCE(sat)* IC=150mA, IB=15mA
Base-Emitter ON Voltage
VBE(on)* IC=150mA, VCE=1V
*Pulse Condition: Pulse Width < 300us, Duty Cycle < 2%.
MAX
50
25
280
0.6
0.9
UNITS
V
V
V
nA
nA
V
V
C100_D100 Rev_1 301104D
Continental Device India Limited
Data Sheet
Page 1 of 4
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