BUF508F Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN POWER TRANSISTORS

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN POWER TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
C
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto T_a=25º C
T_c=25º C
Storage Temperature Range
Max Operating Junction Temperature
SYMBOL
V_CES
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
THERMAL RESISTANCE
Thermal Resistance Junction - Case
R_{th (j-c)}
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
.
DESCRIPTION
SYMBOL TEST CONDITIONS
Collector Cut off Current
Collector Emitter Sustaining Voltage
I_CES
V_{CEO (sus)}*
V_CE=V_CES, V_BE=0
I_B =0, I_C=100mA
Emitter Base Voltage
V_EBO
I_E=10mA, I_C =0
BU508F, AF
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
BU508DF
DC Current Gain
h_FE
I_C=4.5A, V_CE=5V
Diode forward Voltage
V_F
I_F=4.0A
BU508DF
Collector Emitter Saturation Voltage
V_{CE(sat) *}
I_C=4.5A, I_B=2.0A
BU508AF, DF
I_C=4.5A, I_B=2.0A
BU508F
Base Emitter Saturation Voltage
V_{BE(sat) *}
I_C=4.5A, I_B=2.0A
MIN
700
5.0
2.25
SWITCHING TIME
Storage Time
Fall Time
t_s
I_C=4.5A,h_FE=2.5,V_CC=140V
t_f
L_C=0.9mH, L_B=3µH
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
Continental Device India Limited
Data Sheet
TYP
7.0
0.5
MAX
1.0
300
UNIT
mA
V
V
mA
2.0
V
1.0
V
5.0
V
1.5
V
µs
µs
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