BUF508A Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
Q
BUF508A
TO-220FP Fully Isolated
Plastic Package
Applications
High voltage, high - speed switching transistor in TO - 220FP package envelope intended
for use in horizontal deflection of colour television circuits.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
Collector Emitter Voltage Peak Value; VBE=O
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current
(DC or average over any 20ms period)
SYMBOL
VCESM
V_CEO
I_C
I_CM
I_B
I_BM
- IB(AV)
VALUE
1500
700
8.0
15
4.0
6.0
100
UNIT
V
V
A
A
A
A
mA
Reverse Base Current *(Peak Value)
I_BM
5.0
A
Power Dissipation upto Tmb=25ºC
Ptot
60
W
Operating & Storage Junction
T_{j, Tstg}
-65 to +150
ºC
Temperature Range
*Turn off current
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX UNIT
Collector Cut off Current **
I_CES
VCE=VCESM max, VBE=0
-
1.0
mA
Emitter Cut off Current
Collector Emitter (sus) Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
I_EBO
V_{CEO (sus)}
V_{CE (Sat)}
VBE(Sat)
Tj=125ºC
VCE=VCESM max, VBE=0
V_EB=6V,I_C=0
I_C=100mA, I_B=0, L=25mH
I_C=4.5A, I_B=2A
I_C=4.5A, I_B=2A
DYNAMIC CHARACTERISTISC
Transition Frequency
ft
Collector Capacitance
Cc
**Measured with half - sinewave voltage (curve tracer)
IC=0.1A, VCE=5V, f=5MHz
IE=ie=0, VCB=10V, f=1MHz
-
2.0
-
10
700
-
-
1.0
-
1.3
TYP 7.0
TYP 125
mA
mA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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