BU508AT Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
BU508AT
TO-220
Plastic Package
High Voltage, High-Speed Switching Transistor
Intended for use in Horizontal Deflection Circuits of Colour Televisions
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current (DC or average
over any 20 ms period)
Reverse Base Current (Peak Value)
Power Dissipation upto T_c=25ºC
Operating and Storage Junction
Temperature Range
*Turn off Current
SYMBOL
V_CES
V_CEO
I_C
I_CM
I_B
I_BM
-I_B(AV)
*-I_BM
P_tot
T_j, T_stg
VALUE
1500
700
8
15
4
6
100
5
60
- 65 to +150
UNIT
V
V
A
A
A
A
mA
A
W
ºC
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Cut off Current
**I_CES
V_CE=V_CES max, V_BE=0
Emitter Cut off Current
Collector Emitter Sustaining Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
I_EBO
*V_CEO(sus)
*h_FE
*V_CE(sat)
*V_BE(sat)
f_T
C_C
**Measured with half-sinewave Voltage (curve tracer)
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%
T_j=125ºC
V_CE=V_CES max, V_BE=0
V_EB=6V, I_C=0
I_C=100mA, I_B=0, L=25mH
I_C=4.5A, V_CE=5V
I_C=4.5A, I_B=2A
I_C=4.5A, I_B=2A
I_C=0.1A, V_CE=5V, f=5MHz
I_E=ie=0, V_CB=10V, f=1MHz
700
2.25
TYP
7
125
MAX
1.0
2.0
10
1.0
1.3
UNIT
mA
mA
mA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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