BU109 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN HIGH VOLTAGE SILICON POWER TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR
IS/ISO 9002
Lic# QSC/L-000019.3
BU109
TO-3
Metal Can Package
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Emitter Voltage (V_BE= -1.5V)
Collector Current
Collector Peak Current (Repetitive)
Collector Peak Current (t=10ms)
Base Current
Total Power Dissipation@ Tc<25ºC
Juntion Temperature
Storage Temperature
V_CEO
V_CBO
V_EBO
V_CEV
I_C
I_CM
I_CM
I_B
P_tot
T_j
T_stg
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Turn off Time
I_CES
I_CES
I_CES
I_EBO
V_CE(Sat) *
V_BE(Sat) *
f_T
t_off
V_CE=330V, V_BE=0
V_CE=200V, V_BE=0
V_CE=200V, V_BE=0
T_C=150ºC
V_EB=6V, I_C=0
I_C=5A,I_B=0.5A
I_C=5A,I_B=0.5A
I_C=0.5A, V_CE=10V
I_C=5A, I_B end = 0.5A
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%
Continental Device India Limited
Data Sheet
VALUE
150
330
6.0
330
7.0
10.0
15.0
4.0
60
150
-65 To+150
70
2.08
UNITS
V
V
V
V
A
A
A
A
W
ºC
ºC
ºC/W
ºC/W
MIN
MAX
UNITS
5.0
mA
100
µA
1.0
mA
1.0
mA
1.0
V
1.2
V
10
MHz
0.75
us
Page 1 of 3