BT152 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Thyristors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
THYRISTOR
BT152- 600R
TO-220
Plastic Package
For use in Applications Requiring High Bidirectional Blocking Voltage Capability and High Thermal
Cycling Performance Typical Applications include Motor Control, Industrial and Domestic Lighting,
Heating and Static Switching
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive Peak Off State Voltage
V_DRM, V_RRM
600
V
Average On State Current
I_{T (AV)}
13
A
RMS On State Current
I_{T (RMS)}
20
A
Non Repetitive Peak On State Current
I_TSM
200
A
l²t for Fusing
Repetitive Rate of Rise of On State
Current After Triggering
Peak Gate Current
Peak Gate Power
Average Gate Power
Storage Temperature
Operating Junction Temperature
I²t
di/dt
I_GM
P_GM
P_{G (AV)}
T_stg
T_j
200
200
5.0
20
0.5
- 40 to +150
125
A²s
A/µs
A
W
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (T_J=25ºC unless specified otherwise)
PARAMETER
SYMBOL
TEST CONDITION
MIN
Gate Trigger Current
I_GT
V_D=12V, I_T=0.1A
Gate Trigger Voltage
Latching Current
V_GT
V_D=12V, I_T=0.1A
I_L
V_D=12V, I_GT=0.1A
Holding Current
I_H
V_D=12V, I_GT=0.1A
On State Voltage
V_TM
I_T=40A
Off State Leakage Current
I_DRM, I_RRM V_DRM =V_RRM=600V T_J=125ºC
MAX
32
1.5
80
60
1.75
5.0
UNIT
mA
V
mA
mA
V
mA
BT152_600R Rev251104E
Continental Device India Limited
Data Sheet
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