BT136F Datasheet, PDF (1/2 Pages) NXP Semiconductors – Triacs

Continental Device India Limited
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BT136F
Triac Series
TO-220F
Absolute maximum ratings
Parameter
peak repetitive off-stage voltage
on-state RMS current
NON repetitive surge peak on-state current
critical rate of rise on-state current
peak gate current
average gate power dissipation
storage temperature range
operating junction temperature range
Symbol
V_DRM, V_RRM
I_T(RMS)
I_TSM
dI/dt (Q_1-3)
I_GM
P_G(AV)
Tstg
Tj
Value
600
4
25
50
2
0.5
-40 to +150
125
Electrical characteristics ( Tj=25ºC) unless otherwise specified
Parameter
Symbol
gate trigger current
I_GT
gate trigger voltage
hold current
critical rate of rise off-state voltage
on-state voltage
off-state leakage current
thermal resistance
V_GT
I_H
dv/dt
V_TM
I_DRM
R_th(j-a)
R_th(j-c)
Value
<10
<10
<10
<25
<1.5
<30
>50
<1.7
<0.5
60
<3.7
Unit
V
A
A
A/µs
A
W
o_C
o_C
Unit
mA
mA
mA
mA
V
mA
V/µs
V
mA
ºC/W
Test condition
TL<66ºC
Tp=20ms, Tj=25 ºC
I_TM=20A, T_G=0.2A
Test condition
T2+G+
T2+G-
T2-G-
T2-G+
V_D=12V, I_T=0.1A
V_D=12V, I_T=0.1A
V_D=12V, I_T=0.1A
V_D=12V, I_T=0.1A
V_D=12V, I_T=0.1A
V_D=12V, I_T=0.1A
V_D=67%V_DRM
I_T=5A
V_D=V_DRM; Tj=125^oC
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BT136F Rev270310E
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Data Sheet
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