English
Language : 

BSX62 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
BSX62, BSX63
TO-39
Metal Can Package
NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
VCES
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Base Current
IB
Total Power Dissipation @ Ta=25ºC
Ptot
Operating And Storage Junction
Tj, Tstg
Temperature Range
BSX62
BSX63
40
60
60
80
5
5
3.0
500
5.0
-65 to +200
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
200
Junction to Case
Rth(j-c)
35
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BSX62
MIN MAX
Collector Emitter Breakdown Voltage BVCEO* IC=100mA,IB=0
40
Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0
60
Emitter Base Breakdown Voltage
BVEBO IE=10µA,IC=0
5.0
Collector Cut off Current
ICES VCE=40V,VBE =0V
0.1
VCE=40V,VBE =0V
100
Ta=150ºC
Collector Cut off Current
ICES VCE=60V,VBE =0
VCE=60V,VBE =0
Ta=150ºC
Collector Emitter Saturation Voltage VCE(Sat) * IC=2A,IB=.2A
0.8
IC=1A,IB=.1A
0.7
Base Emitter Saturation Voltage
VBE(Sat) * IC=2A,IB=.2A
1.3
IC=1A,IB=.1A
1.2
BSX63
MIN MAX
60
60
5.0
0.1
100
0.8
0.7
1.3
1.2
Base Emitter Voltage
VBE(on)
IC=.1A, VCE=1V
IC=1.0A, VCE=1V
IC=2.0A, VCE=5V
1.0
1.0
1.2
1.2
1.3
1.3
UNITS
V
V
V
A
mA
W
ºC
K/W
K/W
UNITS
V
V
V
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
 ▷