BSX45 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
BSX45
BSX46
BSX47
TO-39
Metal Can Package
AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BSX45 BSX46 BSX47 UNITS
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25º C
Derate Above 25º C
Power Dissipation@ Tc=25º C
Derate Above 25º C
Operating And Storage Junction
Temperature Range
V_CEO
V_CES
V_EBO
I_C
P_D
P_D
T_j, T_stg
40
60
80
V
80
100
120
V
7.0
V
1.0
A
1.0
W
5.71
mW/ ºC
5.0
W
28.6
mW/ ºC
-65 to +200
ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
200
ºC/W
35
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
BSX45 BSX46 BSX47 UNITS
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
V_CEO*
V_CES
V_EBO
I_CES
I_C=30mA,I_B=0
I_C=100µA,V_BE=0
I_E=100µA, I_C =0
V_CE=60V,V_BE=0
V_CE=80V,V_BE=0
>40
>60
>80
V
>80
>100
>120
V
>7.0
V
<10
<10
nΑ
<10
nΑ
I_CES Tc =150ºC
V_CE=60V,V_BE=0
V_CE=80V,V_BE=0
<10
<10
µA
<10
µA
Emitter Cut off Current
I_EBO V_EB=5V, I_C=0
<10
nΑ
Continental Device India Limited
Data Sheet
Page 1 of 4