BSX20 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BSX20
TO-18
APPLICATIONS
High Speed Saturated Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Peak Current (t=10us)
Power Dissipation@ Ta=25 degC
@Tc=25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
SYMBOL
VCBO
VCES
VCEO
VEBO
ICM
Ptot
Tj, Tstg
Rth(j-c)
Rth(j-a)
VALUE
40
40
15
4.5
0.5
0.36
1.20
-65 to +200
146
486
UNIT
V
V
V
V
A
W
W
deg C
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector-Cut off Current
ICBO
VCB=20V, IE=0
VCB=20V, IE=0, Ta=150 deg C
MIN MAX
- 400
- 30
UNIT
nA
uA
ICES
VCE=15V, VBE=0, Ta=55 deg C
VCE=40V, VBE=0
- 400
nA
- 1.0
uA
Emitter-Cut off Current
Base-Cut off Current
Collector -Emitter (sus) Voltage
Collector -Emitter Voltage
Collector Emitter Saturation Voltage
Base Emitter on Voltage
Base Emitter Saturation Voltage
DC Current
ICEX
VCE=15V, VBE=-3V , Ta=55 deg C
IEBO
VEB=4.5V, IC=0
IBEX
VCE=15V, VBE=-3V , Ta=55 deg C
VCER (sus)* IC=10mA, RBE=10 ohms
VCEO*
IC=10mA, IB=0
VCE(Sat)* IC=10mA,IB=1mA
IC=100mA,IB=10mA
IC=10mA,IB=0.3mA
VBE(on) IC=30uA,VCE=20V, Ta=100deg C
VBE(Sat) * IC=10mA,IB=1mA
IC=100mA,IB=10mA
hFE*
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=1V, Ta= -55 deg C
- 600
nA
- 10
uA
- 600
nA
20 -
15 -
V
- 0.25
V
- 0.60
V
- 0.30
V
0.35 -
V
0.70 0.85
V
- 1.50
V
40 120
20 -
20 -
Continental Device India Limited
Data Sheet
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