BSV15 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP SILICON PLANAR TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BSV15
BSV16
BSV17
TO- 39
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BSV15 BSV16 BSV17
UNIT
Collector -Emitter Voltage
VCEO
40 60
80
V
Collector -Emitter Voltage
VCES
40 60
90
V
Emitter -Base Voltage
VEBO
5.0 5.0
5.0
V
Collector Current (DC)
IC
1.0
A
Base Current (DC)
IB
200
mA
Power Dissipation up to Tamb=25 degC Ptot
0.8
W
Power Dissipation up to Tcase=25 degC
5.0
W
Power Dissipation up to Tmb=50 degC
5.0
W
Operating And Storage Junction
Tj, Tstg
-65 to +200
deg C
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
220
K/W
Junction to Case
Rth(j-c)
35
K/W
Junction to Mounting Base
Rth(j-mb)
30
K/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BSV15
BSV16 BSV17 UNIT
Collector-Cut off Current
ICES VBE=0, VCE=40V
<100
-
- nA
VBE=0, VCE=60V
-
<100
- nA
VBE=0, VCE=80V
-
-
<100 nA
Tamb=150 deg C
VBE=0, VCE=40V
VBE=0, VCE=60V
VBE=0, VCE=80V
<50
-
- uA
-
<50
- uA
-
-
<50 uA
Emitter-Cut off Current
Collector -Emitter Voltage
Emitter-Base Voltage
Base Emitter on Voltage
Collector Emitter Saturation Voltage
ICEX Tamb=100 deg C
VBE=0.2V, VCE=40V
VBE=0.2V, VCE=60V
VBE=0.2V, VCE=80V
IEBO IC=0, VEB=4V
VCEO* IC=50mA, IB=0
VCES VBE=0, IC=10uA
VEBO IE=10uA, IC=0
VBE(on) IC=100mA, VCE=1V
IC=500mA, VCE=1V
VCE(Sat) IC=500mA,IB=25mA
<50
-
-
<50
>40
>40
>5.0
ALL
ALL
ALL
-
- uA
<50
- uA
-
<50 uA
<50
<50 nA
>60
>80 V
>60
>90 V
>5.0
>5.0 V
<1.0
V
0.7 to 1.4
V
<1.0
V
Continental Device India Limited
Data Sheet
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