BSR20 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BSR20
BSR20A
SILICON P–N–P HIGH–VOLTAGE TRANSISTORS
P–N–P high–voltage small–signal transistors
Marking
BSR20 = T35
BSR20A = T36
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base boltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T_amb = 25 °C
Junction temperature
Collector–emitter saturation voltage
I_C = 50 mA; l_B = 5 mA
D.C. current gain
I_C = 10 mA; V_CE = –5 V
BSR20 BSR20A
–V_CB0 max. 130 160 V
–V_CE0 max. 120 150 V
–I _C max. 600 600 mA
P_tot max. 250 250 mW
T_j
max. 150 150 ° C
V_CEsat max. 0,5 0,5 V
h_FE min. 40
60
max. 180 240
Continental Device India Limited
Data Sheet
Page 1 of 5