BSR19 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
BSR19
BSR19A
SILICON N–P–N HIGH–VOLTAGE TRANSISTORS
N–P–N high–voltage small–signal transistors
Marking
BSR19 = U35
BSR19A = U36
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
IS/ISO 9002
Lic# QSC/L- 000019.2
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T_amb = 25 °C
Junction temperature
Collector–emitter saturation voltage
I_C = 50 mA; l_B = 5 mA
D.C. current gain
I_C = 10 mA; V_CE = 5 V
V_CB0
V_CE0
I_C
P_tot
T_j
BSR19 BSR19A
max. 160 180 V
max. 140 160 V
max. 600 600 mA
max. 250 250 mW
max. 150 150 ° C
V_CEsat max. 0,25 0,20 V
h_FE min. 60
80
Continental Device India Limited
Data Sheet
Page 1 of 3