BSR13 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BSR13
BSR14
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
BSR13 = U7
BSR14 = U8
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T_amb = 25 °C
Junction temperature
D.C. current gain
I_C = 150 mA; V_CE = 10 V
I_C = 500 mA; V_CE = 10 V
Transition frequency at f ⁼ 100 MHz
I_C = 20 mA; V_CE = 20 V
V_CB0
V_CE0
V_EB0
I_C
P_tot
T_j
BSR13
max. 60
max. 30
max. 5
max.
max.
max.
BSR14
75 V
40 V
6V
800
mA
250
mW
150
°C
h_FE
h_FE >
100 to 300
30
40
f_T
>
250
300 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4