BFY50 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR TRANSISTORS
BFY50, BFY51, BFY52
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation @ Ta=25ºC
P_D
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
I_C=10mA,I_B=0
Collector Base Voltage
V_CBO
I_C=10µA,I_E=0
Emitter Base Voltage
V_EBO
I_C=10µA,I_C=0
Collector Cut off Current
I_CBO
V_CB=60V, I_E=0
V_CB=40V, I_E=0
V_CB=30V, I_E=0
T_j =100^oC
V_CB=60V, I_E=0
V_CB=40V, I_E=0
V_CB=30V, I_E=0
BFY50 BFY51 BFY52
35
30
20
80
60
40
6.0
1.0
0.8
4.6
5.0
28.6
-65 to +200
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
89.5
ºC/W
16.5
ºC/W
BFY50 BFY51
>35 ^>30
>80 ^>60
>6.0 >6.0
<50
<50
BFY52
>20
>40
>6.0
<50
UNITS
V
V
V
nA
nA
nA
<2.5
µA
<2.5
µA
<2.5
µA
Continental Device India Limited
Data Sheet
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