BFX87 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BFX87
BFX88
TO-39
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BFX87
BFX88
Collector -Base Voltage
VCBO
50
40
Collector -Emitter Voltage
VCEO
50
40
Collector Current (DC)
IC
600
Peak value
ICM
600
Emitter Current
IEM
600
Power Dissipation up toTamb=25 degC Ptot
600
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
300
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector-Cut off Current
ICBO
BFX87
VCB=40V, IE=0
-
-
VCB=50V, IE=0
-
-
UNIT
V
V
mA
mA
mA
mW
deg C
K/W
MAX
UNIT
50 nA
500 nA
Tj=100 deg C
VCB=40V, IE=0
BFX88
VCB=30V, IE=0
VCB=40V, IE=0
-
- 2.0
uA
-
-
-
-
50 nA
500 nA
Emitter-Cut off Current
DC Current Gain
IEBO
hFE
Tj=100 deg C
VCB=30V, IE=0
-
VEB=3V, IC=0
-
VEB=4V, IC=0
-
IC=1mA,VCE=10V
40
IC=10mA,VCE=10V
40
IC=150mA,VCE=10V 40
IC=500mA,VCE=10V 25
- 2.0
uA
-
100 nA
-
500 nA
-
-
-
-
-
-
-
-
Continental Device India Limited
Data Sheet
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