BFX84 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
BFX84
TO-39
Metal Can Package
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Total Device Dissipation @ Ta=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
VALUE
60
100
6.0
1.0
0.8
4.57
-65 to +200
UNITS
V
V
V
A
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
220
ºC/W
35
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Collector Cut off Current
SYMBOL
BV_CEO
BV_CBO
I_CBO
Emitter Cut off Current
I_EBO
DC Current Gain
h_FE
Collector Emitter (Sat) Voltage
V_CE(Sat)
TEST CONDITION
I_C=10mA,I_B=0
I_C=100µA,I_E=0
V_CB=80V, I_E=0
V_CB=80V, I_E=0,Tj=100ºC
V_CB=100V, I_E=0
V_CB=100V, I_E=0,Tj=100ºC
V_EB=5V, I_C=0
V_EB=5V, I_C=0,Tj=100ºC
V_EB=6V, I_C=0
I_C=10mA,V_CE=10V
I_C=150mA,V_CE=10V
I_C=500mA,V_CE=10V
I_C=1A, V_CE=10V
I_C=10mA,I_B=1.0mA
I_C=150mA,I_B=15mA
I_C=500mA,I_B=50mA
I_C=1A,I_B=100mA
BFX84
MIN MAX
60
100
50
2.5
500
2.5
50
2.5
500
20
30
20
15
0.15
0.35
1.00
1.60
UNITS
V
V
nΑ
µA
nΑ
µA
nΑ
µA
nΑ
V
V
V
V
Continental Device India Limited
Data Sheet
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