BFX37 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
BFX37
TO-18
Metal Can Package
Low Lever, Low Noise Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T_a=25ºC
Power Dissipation at T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CES
V_CEO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
90
80
6.0
100
360
1.2
- 55 to +200
THERMAL CHARACTERISTICS
Junction to Case
R_{th (j-c)}
146
Junction to Ambient in free air
R_{th (j-a)}
486
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Cut Off Current
I_CES
V_CE=70V, V_BE=0
V_CE=70V, V_BE=0,
T_a=150ºC
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0
Collector Emitter Voltage
V_CES
I_C=10µA, V_BE =0
90
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
80
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
6.0
Collector Emitter Saturation Voltage
*V_{CE (sat)} I_C=10mA, I_B=0.5mA
I_C=50mA, I_B=5mA
Base Emitter On Voltage
V_{BE (on)}
I_C=1mA,V_CE=5V
Base Emitter Saturation Voltage
*V_{BE (sat)} I_C=10mA, I_B=0.5mA
I_C=50mA, I_B=5mA
DC Current Gain
*h_FE
I_C=1µA,V_CE=5V
I_C=10µA,V_CE=5V
70
I_C=100µA,V_CE=5V
125
I_C=1mA, V_CE=5V
125
I_C=10mA, V_CE=5V
125
*Pulsed: Pulse duration = 300µs, duty cycle = 1%
BFX37Rev230506E
UNIT
V
V
V
mA
mW
W
ºC
ºC/W
ºC/W
TYP MAX UNIT
10
nA
10
µA
10
nA
V
V
V
0.25 V
0.40 V
0.65
V
0.9
V
0.95 V
130
230
280
Continental Device India Limited
Data Sheet
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