BFX34 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
BFX34
TO-39
NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current
Switching Device, e.g. Inverters And Switching Regulators.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (d.c)
IC
Collector Current (peak-value)
ICM
Base Current (d.c)
IB
Power Dissipation up to Tcase=25 deg C
Ptot
up to Tamb=25 deg C Ptot
Junction and Storage Temperature Range
Tj,Tstg
THERMAL RESISTANCE
Junction to Ambient
Rth (j-a)
Junction to Case
Rth (j-c)
ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise specified)
SYMBOL TEST CONDITION
VALUE
120
60
6.0
2.0
5.0
1.0
5.0
0.87
-55 to +200
200
35
MIN TYP
MAX
UNIT
V
V
V
A
A
A
W
W
deg C
K/W
K/W
UNIT
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Collector Capacitance
Emitter Capacitance
Transition Frequency
Turn on Time When Switched From
Turn on Time When Switched From
ICES
IEBO
VCE(Sat)
VBE(Sat)
hFE
Cc
Ce
ft
ton
toff
VCE=60V, VEB=0
VEB=4V, IC=0
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=1A, VCE=2V
IC=1.5A, VCE=0.6V
IC=2A, VCE=2V
VCB=10V, IE=Ie=0
f=1MHz
VEB=0.5V, IC=Ic=0
f=1MHz
IC=0.5A, VCE=5V
f=35MHz
VBE=2V to IC=5V,
IB=0.5A With IBM=
0,5A
IC=5A, IB=0.5A, to -
VBE=2V with -IBM
=0.5A
-
-
10
uA
-
-
10
uA
-
-
1.0
V
-
-
1.8
V
-
30
-
-
60
-
40
- 150
-
36
-
pF
-
440
-
pF
70
-
-
MHz
-
- 0.60
us
-
-
1.2
us
Continental Device India Limited
Data Sheet
Page 1 of 2