BFX30 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
BFX30
TO-39
Metal Can Package
INTENDED FOR SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Peak
I_CM
Emitter Curent (Peak Value)
I_EM
Total Device Dissipation @ Ta=25ºC
P_tot
Operating And Storage Junction
T_j, T_stg
Temperature Range
VALUE
65
65
5.0
600
600
600
600
-65 to +200
THERMAL RESISTANCE
Junction to Ambient
R_th(j-a)
300
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
I_CBO
I_EBO
h_FE
TEST CONDITION
V_CB=65V, I_E=0
V_CB=50V, I_E=0
V_CB=50V, I_E=0, Tj=100ºC
V_EB=5V, I_C=0
V_EB=3V, I_C=0
I_C=1.0mA,V_CE=0.4V
I_C=10mA,V_CE=0.4V
I_C=50mA,V_CE=0.4V
I_C=150mA,V_CE=0.4V
VALUE
MIN MAX
500
50
2.0
500
100
40
50
200
20
10
Base Emitter Saturation Voltage
V_BE(Sat)
I_C=30mA,I_B=1.0mA
0.9
I_C=150mA,I_B=15mA
1.3
UNITS
V
V
V
mA
mA
mA
mW
ºC
K/W
UNITS
nA
nA
µA
nA
nA
V
V
Continental Device India Limited
Data Sheet
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