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BF820 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF820
BF822
SILICON EPITAXIAL TRANSISTORS
NâPâN transistors
Marking
BF820 = 1V
BF822 = 1X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collectorâbase voltage (open emitter)
Collectorâemitter voltage (open base)
Collectorâemitter voltage (RBE = 2,7 kW )
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
D.C. current gain
IC = 25 mA; VCE = 20 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 30 V
Transition frequency at f = 35 MHz
IC = 10mA; VCE = 10 V
VCB0
VCE0
VCER
ICM
Ptot
Tj
BF820
max. 300
max. â
max. 300
max.
max.
max.
BF822
250 V
250 V
âV
100
mA
250
mW
150
°C
hFE >
50
Cre
<
1,6
pF
fT
>
60
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
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