BF470 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP PLASTIC POWER TRANSISTORS
BF470, 472
TO126
Plastic Package
ECB
Complementary BF469, 471
Video Applications in TV
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage(open emitter)
Collector Emitter Voltage (open base)
Collector Emitter Voltage (R_BE <2.7KΩ)
V_CBO
V_CEO
V_CER
Emitter Base Voltage(open collector)
Collector Current
Collector Current (Peak Value)
Total Power Dissipation@ Tc=110⁰ C
Junction Temperature
Storage Temperature
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
470
>250
>250
472
>300
<300
>5.0
<30
<100
<2.0
<150
-65 to +150
UNITS
V
V
V
V
mA
mA
W
ºC/W
ºC/W
THERMAL RESISTANCE
From Junction to case
From Junction to ambient
R_th(j-c)
R_th(j-a)
20
K/W
100
K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
470
472 UNITS
Collector-Cut off Current
Emitter cut off Current
I_CBO I_E =0, V_CB =200V
<100
nΑ
I_CER R_BE=2.7kΩ,
<50
nΑ
V_CE=250V
I_CER R_BE=2.7kΩ,
<10
µA
V_CE=200V,T_J=150ºC
I_EBO
V_EB =5V, I_C =0
<10
µA
Breakdown Voltages
V_CEO I_C =1mA, I_B =0
>250
V
V_CER I_C=1µA,R_BE=2.7KΩ
>300
V
V_CBO I_C =10µA, I_E =0
>250
>300
V
V_EBO I_C =0, I_E =10µA
>5.0
V
DC Current Gain
h_FE
I_C=25mA,V_CE=20V
>50
Transition Frequency
Feedback Capacitance f=0.5MHz
f_T
I_C=10mA, V_CE=10V
C_re
I_C=0, V_CE=30V
>60
>1.8
MHz
pF
Continental Device India Limited
Data Sheet
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