BF469 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS

BF 469, BF471
TO126
Plastic Package
ECB
Complementary BF470, 472
Video Applications in TV
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage(open emitter)
Collector Emitter Voltage (open base)
Collector Emitter Voltage (R_BE =2.7KΩ)
V_CBO
V_CEO
V_CER
Emitter Base Voltage(open collector)
Collector Current
Collector current (Peak Value)
V_EBO
I_C
I_CM
Total Power Dissipation@ Tc=110ºC
P_tot
Junction Temperature
T_j
Storage Temperature
T_stg
469
471
>250
>250
>300
<300
>5.0
<30
<100
<2
<150
-65 to +150
UNITS
V
V
V
V
mA
mA
W
ºC
ºC
THERMAL RESISTANCE
From Junction to case
From Junction to ambient
R_th(j-c)
R_th(j-a)
20
K/W
100
K/W
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
Collector-Cut off Current
I_CBO I_E =0, V_CB =200V
I_CER R_BE=2.7kΩ,
V_CE=250V
I_CER R_BE=2.7kΩ,
V_CE=200V,T_J=150ºC
469
<100
Emitter cut off Current
Breakdown Voltages
I_EBO
V_CEO
V_CER
V_CBO
V_EBO
V_EB =5V, I_C =0
I_C =1mA, I_B =0
I_C=1uA,R_BE=2.7KΩ
I_C =10uA, I_E =0
I_C =0, I_E =10uA
>250
>250
<10
>5.0
471
<50
<10
>300
>300
UNITS
nΑ
nΑ
µA
nΑ
V
V
V
V
DC Current Gain
h_FE I_C=25mA,V_CE=20V
>50
Transition Frequency
Feedback Capacitance f=0.5MHz
f_T I_C=10mA, V_CE=10V
C_re I_C=0, V_CE=30V
>60
>1.8
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3