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BF420 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors(NPN)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE
VIDEO TRANSISTORS
BF420
BF422
TO-92
Plastic Package
Designed For High Voltage Video Amplifier In Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
420
422
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
300
250
300
250
5
500
800
6.4
2.75
22
-55 to +150
THERMAL RESISTANCE
Junction to ambient
Rth(j-a)
156
Junction to case
Rth(j-c)
45
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage*
VCEO IC=1.0mA,IB=0
Collector Base Voltage
VCBO IC=100µA.IE=0
Emitter Base Voltage
VEBO IE=100µA, IC=0
Collector Cut off Current
ICBO VCB=200V,IE=0
Emitter Cut off Current
IEBO VEB=5.0V, IC=0
DC Current Gain
hFE IC=25mA,VCE=20V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
422
>250
>250
>5
<10
<100
>50
<0.5
<2
420
>300
>300
>5
<10
<100
>50
<0.5
<2
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
nA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4