BF199 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BF199
TO-92
Plastic Package
CE ^B
RF Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
25
40
4.0
100
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to case
R_{th (j-c)}
125
Junction to Ambient in free air
R_{th (j-a)}
357
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=20V, I_E = 0
DC Current Gain
h_FE
I_C=7mA, V_CE=10V
Base Emitter On Voltage
V_{BE (on)}
I_C=7mA, V_CE=10V
MIN TYP MAX
25
40
4
100
40
0.90
DYNAMIC CHARACTERISTICS
Transition Frequency
Common Emitter Feedback Capacitance
Noise Figure
f_T
I_C=5mA, V_CE=10V, f=100MHz 400
C_re
V_CB=10V, I_E=0, f=1MHz
0.35
NF
I_C =4mA, V_CE=10V, R_S=50Ω,
2.5
f=35MHz
BF199Rev_1 240403E
UNITS
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
V
MHz
pF
dB
Continental Device India Limited
Data Sheet
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