BDW47 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR
BDW47
TO-220
Plastic Package
General Purpose and Low Speed Switching Application
Complementary BDW42
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Base Current
Total Device Dissipation @ T_c=25ºC
Derate above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_j, T_stg
VALUE
100
100
5.0
15
0.5
85
0.68
- 55 to +150
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
1.47
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage
*V_{CEO (sus)}
I_C=30mA, I_B=0
Collector Cutoff Current
I_CEO
V_CE=50V, I_B=0
Collector Cutoff Current
I_CBO
V_CB=100V, I_E=0
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
I_EBO
*h_FE
*V_{CE (sat)}
*V_{BE (on)}
V_BE=5.0V, I_C=0
I_C=5.0A, V_CE=4.0V
I_C=10A, V_CE=4.0V
I_C=5.0A, I_B=10mA
I_C=10A, I_B=50mA
I_C=10A, V_CE=4.0V
SECOND BREAKDOWN
Second Breakdown Collector Current
with Base Forward Biased
**I_S/b
V_CE = 22.5V
V_CE = 36V
DYNAMIC CHARACTERISTICS
Transition Frequency
f_T I_C=3.0A, V_CE=3.0V, f=1MHz
Output Capacitance
C_ob V_CB=10V, I_E=0, f=0.1MHz
Small-Signal Current Gain
h_fe I_C=3.0A, V_CE=3.0V, f=1kHz
* Pulse test : Pulse Width =300µs, Duty Cycle = 2.0%
** Pulse test non repetitive : Pulse Width = 250 ms
MIN
100
1000
250
3.8
1.2
4.0
300
BDW47Rev140803E
Continental Device India Limited
Data Sheet
UNIT
V
V
V
A
A
W
W/ºC
ºC
ºC/W
MAX
2.0
1.0
2.0
UNIT
V
mA
mA
mA
2.0
V
3.0
V
3.0
V
A
A
MHz
300
pF
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