BD676 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium-Power Silicon PNP Darlingtons

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP DARLIGNTON POWER SILICON TRANSISTORS
BD676, 676A
BD678, 678A
BD680, 680A
BD682, 684
ECB
TO126
Plastic Package
For Use As Output Devices In Complementary General Purpose Amplifier Applications.
COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683
BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT
BD676A BD678A BD680A
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation @ Tc=25ºC
Derate above 25ºC
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
45
60
80 100 120 V
45
60
80 100 120 V
5.0
V
4.0
A
0.1
A
40
W
0.32
W/ºC
Operation and Storage Junction
Temperature Range
T_j,T_stg
-55 to +150
ºC
THERMAL RESISTANCE
Junction to Case
R_th(j-c)
3.13
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT
BD676A BD678A BD680A
Collector Emitter Voltage
Collector Cut off Current
Collector Cut off Current
BV_CEO*
I_CEO
I_CBO
I_C=50mA, I_B=0
V_CE=Half RatedV_CEO,
I_B=0
V_CB=Rated V_CBO,I_E=0
>45
<500
<0.2
>60
<500
<0.2
>80 >100 >120 V
<500 <500 >120 µA
<0.2 <0.2 <0.2 mA
Emitter Cut off Current
DC Current Gain
V_CB=Rated V_CBO,I_E=0
Ta=100ºC
I_EBO V_EB=5V,I_C=0
h_FE*
NON A
I_C=1.5A, V_CE=3V
A
I_C=2A, V_CE=3V
<2
<2
<2 <2 <2 mA
<2
<2
<2 <2 <2 mA
<-------------- >750--------------->
<----------------- >750----------------->
Continental Device India Limited
Data Sheet
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