BD533 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
BD533, BD535, BD537
BD534, BD536, BD538
BD533, 535, 537 NPN PLASTIC POWER TRANSISTORS
BD534, 536, 538 PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
PIN CONFIGURATION
4
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
C
B
F
E
12 3
D
J
G
M
1
2
3
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D
0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J
0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N
31.24
O
DEG 7
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector and emitter current
Total power dissipation up to T_C = 25°C
Junction temperature
Collector-emitter saturation voltage
I_C = 2 A; I_B = 0.2 A
D.C. current gain
I_C = 10 mA; V_CE = 5 V
V_CBO
V_CEO
I_C, I_E
P_tot
T_j
533 535 537
534 536 538
max. 45 60 80 V
max. 45 60 80 V
max.
8.0
A
max.
50
W
max.
150
°C
V_CEsat max.
0.8
V
h_FE
min. 20 20 15
RATINGS (at T_A=25°C unless otherwise specified)
533 535 537
534 536 538
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector-emitter voltage (V_BE = 0)
Emitter-base voltage (open collector)
Collector and emitter current
V_CBO max. 45 60 80 V
V_CEO max. 45 60 80 V
VCES max. 45 60 80 V
V_EBO max.
5.0
V
I_C, I_E max.
8.0
A
Continental Device India Limited
Data Sheet
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