BD410 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON POWER TRANSISTOR
IS/ISO 9002
Lic# QSC/L- 000019.2
BD410
TO-126
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Peak Collector Current
Total Power Dissipation @ Ta=25 ºC
@ Tc=25 ºC
Storage Temperature Range
Lead Temperature 1.6mm from Case for
10 Seconds.
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j, T_stg
T_L
VALUE
500
325
5.0
1.0
1.5
1.25
20
- 55 to +125
260
UNIT
V
V
V
A
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified )
DESCRIPTION
Collector Cut off Current
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
SYMBOL
I_CES
V_CBO
V_{CEO *}
V_EBO
h_FE
V_{BE (Sat)}
V_{CE (Sat)}
TEST CONDITION
V_CE=300V, _IB=0
I_C=500µA, I_E=0
I_C=10mA, I_B=0
I_E=50µA, I_C=0
I_C=5mA, V_CE=10V
I_C=50mA, V_CE=10V
I_C=100mA, V_CE=10V
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
MIN
500
325
5
25
30
20
Dynamic Characteristics
DESCRIPTION
Output Capacitance
Input Capacitance
SYMBOL TEST CONDITION
MIN
C_obo
C_ibo
I_E=0, V_CB=10V, f=1MHz
I_E=0, V_EB=0.5V, f=1MHz
*Pulsed Test tp=300µs,Duty Cycle<2%
TYP MAX UNIT
100
µA
V
V
V
240
1.5
V
0.5
V
TYP MAX UNIT
5.5
pF
90
pF
Continental Device India Limited
Data Sheet
Page 1 of 3