BD240C Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTOR
BD 240C
(BPL)
TO-220
Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier
Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Peak
ICM
Base Current
IB
Collector Power Dissipation @ Ta=25 deg C PD
Derate Above 25 deg C
Collector Power Dissipation @ Tc=25 deg C PD
Derate Above 25 deg C
Unclamped Inductive Load Energy (1)
E
Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance
Junction to Ambient
Rth(j-a)
Junction to Case
Rth(j-c)
(1)Lc=20mH, RBE=100 ohms, RE=0.1 ohms , IC=1.8A.
VALUE
115
100
5.0
2.0
4.0
0.6
2.0
16
30
240
32
150
-65 to +150
62.5
4.17
UNIT
V
V
V
A
A
A
W
mW/deg C
W
mW/deg C
mj
deg C
deg C
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter (sus) Voltage
VCEO(sus)* IC=30mA, IB=0
Collector Cut off Current
ICEO
VCE=60V, IB=0
ICES
VCE=100V, VBE=0
Emitter Cut off Current
IEBO
VBE=5V,IC=0
DC Current Gain
hFE*
IC=0.2A, VCE=4V
IC=1A, VCE=4V
Collector Emitter Saturation Voltage
VCE(Sat)* IC=1A, IB=0.2A
Base Emitter on Voltage
VBE(on)* IC=1A, VCE=4V
MIN TYP MAX
100
-
-
-
-
0.3
-
-
0.2
-
-
1.0
40
-
-
15
-
-
-
-
0.7
-
-
1.3
UNIT
V
mA
mA
mA
V
V
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
BD240C
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Dynamic Characteristics
Small Signal Current Gain
hfe
VCE=10V, IC=0.2A 20
f=1kHz
MAX
-
UNIT
Transition Frequency
ft
VCE=10V,IC=0.2A, 3.0
f=1MHz
*Pulse Condition: Pulse Width =300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
-
MHz
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