BD237-S Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
BD237-S
TO126
Plastic Package
ECB
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Collector Peak Current
I_CM
Total Dissipation @ T_a=25ºC
P_D
Storage Temperature
T_stg
Operating Junction Temperature
T_j
VALUE
120
95
6.0
2.0
8.0
1.30
- 65 to +150
150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=2A, I_B=200mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=2A, I_B=200mA
Collector Cut Off Current
I_CBO
V_CB=100V_, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
*h_FE
I_C=1A, V_CE=2V
I_C=2A, V_CE=2V
Current Gain Bandwidth Product
I_C=3A, V_CE=2V
f_T
I_C=250mA, V_CE=10V
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
MIN
120
95
0.15
0.9
90
35
18
3
UNIT
V
V
V
A
A
W
ºC
ºC
TYP MAX
0.4
1.2
1.0
1.0
260
UNIT
V
V
V
V
µA
µA
MHz
BD237S Rev_1 111204E
Continental Device India Limited
Data Sheet
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