BD233 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

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EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD233
BD235
BD237
NPN
BD234
BD236
BD238
PNP
TO126
Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage (R_BE=1KΩ)
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Dissipation @ T_C=25ºC
Total Dissipation @ T_a=25ºC
Derate above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_CER
V_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
BD233
BD234
45
45
45
BD235
BD236
60
60
60
5.0
2.0
6.0
25
1.25
10
BD237
BD238
100
80
100
- 65 to +150
UNIT
V
V
V
V
A
A
W
W
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
5.0
ºC/W
100
ºC/W
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Cut off Current
I_CBO
V_CB=45V_, I_E=0 BD233/234
V_CB=60V_, I_E=0 BD235/236
V_CB=100V_, I_E=0 BD237/238
Emitter Cut off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
T_C = 150ºC
V_CB=45V_, I_E=0 BD233/234
V_CB=60V_, I_E=0 BD235/236
V_CB=100V_, I_E=0 BD237/238
I_EBO
V_EB=5V, I_C=0
*V_{CEO (sus)}
I_C=0.1A, I_B=0 BD233/234 45
BD235/236 60
BD237/238 80
*V_{CE (sat)}
I_C=1.0A, I_B=0.1A
*V_{BE (on)}
I_C=1.0A, V_CE=2V
TYP MAX
100
100
100
UNIT
µA
µA
µA
2.0 mA
2.0 mA
2.0 mA
1.0 mA
V
V
V
0.6
V
1.3
V
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Data Sheet
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