BD175 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
BD175
BD177
BD179
NPN
BD176
BD178
BD180
PNP
ECB
Intended for use in Medium Power Linear Switching Applications
TO126
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation @ T_a=25ºC
Derate above 25ºC
Power Dissipation @ T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
BD175
BD176
45
45
BD177
BD178
60
60
5.0
3.0
7.0
1.25
10
30
- 65 to +150
BD179
BD180
80
80
UNIT
V
V
V
A
A
W
mW/ºC
W
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
100
4.16
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
I_CBO
Emitter Cut off Current
Collector Emitter Sustaining Voltage
I_EBO
*V_{CEO (sus)}
V_CB=45V_, I_E=0
BD175/76
V_CB=60V_, I_E=0
BD177/78
V_CB=80V_, I_E=0
BD179/80
V_EB=5V, I_C=0
I_C=100mA, I_B=0
BD175/76 45
BD177/78 60
BD179/80 80
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=1A, I_B=0.1A
Base Emitter on Voltage
*V_{BE (on)}
I_C=1A, V_CE=2V
DC Current Gain
*h_FE
I_C=150mA, V_CE=2V
40
I_C=1A, V_CE=2V
15
*h_FE Group I_C=150mA, V_CE=2V
-6
40
- 10
63
Only BD175/76/79
- 16
100
Transition Frequency
f_T
I_C=250mA, V_CE=10V
3.0
*Pulse test:- Pulse width=300µs, Duty cycle=1.5%
ºC/W
ºC/W
MAX
100
100
100
1.0
0.8
1.3
UNIT
µA
µA
µA
mA
V
V
V
V
V
100
160
250
ΜΗz
Continental Device India Limited
Data Sheet
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