BD157 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power NPN Silicon Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS
BD157, BD158
TO-126
Designed For Power Output Stages for Television, Radio, Phonograph And
Other Consumer Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BD157
BD158
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Power Dissipation @ Ta=25 deg C
@ Tc=25 deg C
Derate Above =25 deg C
Operating & Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
IC
IB
PD
Tj, Tstg
250
300
V
275
325
V
5.0
V
0.5
A
1.0
A
0.25
A
2.0
W
20
W
0.16
mW/deg C
-65 to +150
deg C
THERMAL RESISTANCE
Junction to Case
Rth (j-c)
6.25
deg C/W
ELECTRICAL CHARACTERISTICS (Tc=25 deg C unless specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN MAX UNIT
Collector-Emitter Sustaining Voltage VCEO
Collector-Base Voltage
VCBO
Emitter Base Voltage
VEBO
IC=1mA, IB=0
IC=100uA, IE=0
IE=1mA, IC=0
BD157 250 -
V
BD158 300 -
V
BD157 275 -
V
BD158 325 -
V
5.0 -
V
Collector Cut-off Current
ICBO
Emitter Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Current-Gain-Bandwidth Product
IEBO
hFE
VCESAT
VBESAT
ft
Output Capacitance
Cob
VCB=275V, IE=0
VCB=325V, IE=0
VBE=5V,IC=0
IC=50mA,VCE=10V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
f=5 MHz
VCB=20V, f=1MHz
BD157 - 100
BD158 - 100
- 100
30 240
- 1.0
- 1.0
15 -
Typ10
uA
uA
uA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2