BD135 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
BD135 BD137
BD139
TO126
Plastic Package
ECB
Designed for use as Audio Amplifier and Drivers Utilizing
Complementary BD136, BD138, BD140
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage (R_BE=1kΩ)
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ T_a=25ºC
Derate above 25ºC
Power Dissipation @ T_c=25ºC
Derate above 25ºC
Power Dissipation @ T_c=70ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
P_D
P_D
T_j, T_stg
BD135
45
45
45
BD137
60
60
60
5.0
1.5
2.0
0.5
1.25
10
12.5
100
8.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Ambient in free air
R_{th (j-a)}
100
Junction to Case
R_{th (j-c)}
10
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Sustaining Voltage
*V_{CEO (sus)}
I_C=30mA, I_B=0
BD135
45
BD137
60
BD139
80
Collector Cut off Current
I_CBO
V_CB=30V_, I_E=0
V_CB=30V_, I_E=0,
T_c=125ºC
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
*h_FE
I_C=0.005A, V_CE=2V
25
I_C=0.15A, V_CE=2V
40
I_C=0.5A, V_CE=2V
25
*Pulse test:- Pulse width=300µs, duty cycle=2%
BD139
80
100
100
UNIT
V
V
V
V
A
A
A
W
mW/ºC
W
mW/ºC
W
ºC
ºC/W
ºC/W
MAX UNIT
V
V
V
0.1
µA
10
µA
10
µA
250
Continental Device India Limited
Data Sheet
Page 1 of 4