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| BD131 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN power transistor | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL POWER TRANSISTORS
BD131
BD132
NPN
PNP
ECB
General Purpose Medium Power Applications
TO-126
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
Base Current
Peak
Reverse Base Current Peak
Total Device Dissipation upto Tamb=60ºC
Junction Temperature
Storage Temperature Range
Thermal Resistance
From Junction to Mounting Base
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
-IBM
Ptot
Tj
Tstg
Rth(j-mb)
BD131
70
45
6
3
6
0.5
0.5
15
150
-65 to +150
BD132
45
45
4
6
UNIT
V
V
V
A
A
A
A
W
oC
ºC
K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
VCB=50V, IE=0 BD131
Collector Cut-off Current
Emitter Cut-off Current
ICBO
VCB=40V, IE=0 BD132
VCB=50V, IE=0, Tj = 150oC BD131
VCB=40V, IE=0, Tj = 150oC BD132
IEBO
VEB=5V, IC=0
VEB=3V, IC=0
BD131
BD132
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 0.5A, IB = 50mA
IC = 2A, IB = 200mA
Base-Emitter Saturation Voltage
VBE(sat)
IC = 0.5A, IB = 50mA
IC = 2A, IB = 200mA
DC Current Gain
hFE
VCE = 12V, IC = 0.5A
40
VCE = 1V, IC = 2A
20
Dynamic Characteristics
Collector Capacitance
Transition Frequency
CC IE = 0, VCB = 5V, f = 1MHz BD131
fT
IC = 0.25A, VCE = 5V, f = 35MHz,
Tamb = 25oC
60
DC Current Gain Ratio of the
Complementary Pairs
hFE1/hFE2
VCE = 12V, IC = 0.5A
MAX
50
50
10
10
50
50
0.3
0.7
1.2
1.5
60
1.2
UNIT
nA
nA
µA
µA
nA
nA
V
V
V
V
pF
MHz
BD131_132Rev_1 120403D
Continental Device India Limited
Data Sheet
Page 1 of 3
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