BCY77 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – PNP SILICON PLANAR TRANSISTORS

Continental Device India Limited
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PNP SILICON PLANAR TRANSISTORS
BCY77, BCY78
BCY79
TO-18
Metal Can Package
Low Noise Audio Amplifier input stages and Driver Applications
Complementary BCY57/58/59
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_c=45ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CES
V_EBO
I_C
I_B
P_D
P_D
T_j, T_stg
BCY77
60
60
5
100
50
BCY78
32
32
5
200
50
0.39
1.00
- 65 to +200
BCY79
45
45
5
200
50
UNIT
V
V
V
mA
mA
W
W
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_th(j-a)
R_th(j-c)
450
K/W
150
K/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=2mA, I_B=0
Collector Emitter Voltage
V_CES
I_C=10µA, V_BE=0
Emitter Base Voltage
V_EBO
I_E=1µA, I_C=0
Collector Cut off Current
I_CES
V_CE=V_CE max, V_BE=0
V_CE=50V, V_BE=0
V_CE=25V, V_BE=0
V_CE=35V, V_BE=0
V_CE=60V, V_BE=0, T_a=150ºC
V_CE=25V, V_BE=0, T_a=150ºC
V_CE=35V, V_BE=0, T_a=150ºC
Collector Cut off Current
I_CEX
V_CE=V_CE max, V_BE=0.2V,
T_a=100ºC
Emitter Cut off Current
I_EBO
V_EB=4V, I_C=0
Base Emitter on Voltage
V_{BE (on)}
I_C=10µA, V_CE=5V
I_C=2mA, V_CE=5V
I_C=10mA, V_CE=1V
**I_C=50mA, V_CE=1V
*I_C=100mA, V_CE=1V
*ONLY BCY78/79 **ONLY BCY77
BCY77_ 79Rev_4 050707E
BCY77
>60
>60
>5
<100
<20
<10
BCY78
>32
>32
>5
<100
<20
<10
<20
<20
Typ 0.55
0.6 - 0.75
Typ 0.68
Typ 0.72
Typ 0.75
BCY79
>45
>45
>5
<100
<20
<10
UNIT
V
V
V
nA
nA
nA
nA
µA
µA
µA
µA
nA
V
V
V
V
V
Continental Device India Limited
Data Sheet
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