BCY70 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP general purpose transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BCY70 , 71, 72
TO-18
Metal Can Package
General Purpose Industrial Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @Ta=25ºC
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_D
Derate Above 25ºC
Operating Storage and Junction
T_stg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_C=1mA,I_B=0
I_C=100µA.I_E=0
I_E=100µA, I_C=0
V_CB=40V, I_E=0
V_CB=25V, I_E=0
V_CB=40V, I_E=0
Tj = 100ºC
V_CB=25V, I_E=0
Tj = 100ºC
V_CB=V_CBO MAX, I_E=0
I_CEX V_CE =50V, V_EB =3V
BCY70 BCY71 BCY72
40
45
25
50
45
30
5
5
5
200
200
350
2
-65 to +200
UNIT
V
V
V
mA
mA
mW
mW/ºC
ºC
500
ºC/W
150
ºC/W
VALUE
BCY70 BCY71 BCY72
>40
>45 >25
>50
>45 >30
>5
>5 >5
<10
<50
<50
<0.5 <2.0
UNIT
V
V
V
nA
nA
µA
<2
µA
<500 <500 <500
nA
<20
nA
Continental Device India Limited
Data Sheet
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