BCY58 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistors

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY58, BCY59
TO-18
Low Noise Audio Amplifier Input Stages & Driver Applications
Complementary BCY78/79
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BCY58
Collector -Emitter Voltage
VCEO
32
Collector -Emitter Voltage(RBE=10 ohms) VCES
32
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation@ Ta=25 degC
PD
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
PD
Derate Above 25 deg C
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
Junction to Ambient
Rth(j-a)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Emitter Voltage
VCEO IC=10mA,IB=0
Emitter-Base Voltage
VEBO IE=1uA, IC=0
Collector-Cut off Current
ICES
VCE=32V, VBE=0
VCE=45V, VBE=0
Ta=150deg C
VCE=32V, VBE=0
VCE=45V, VBE=0
BCY59
45
45
7.0
0.2
0.6
2.28
1.0
6.67
-65 to +200
150
450
BCY58
>32
>7.0
<10
-
BCY59
>45
>7.0
-
<10
<10
-
-
<10
UNITS
V
V
V
A
W
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
UNITS
V
V
nA
nA
uA
uA
Emitter-Cut off Current
ICEX
IEBO
Ta=100deg C
VCE=32V, VBE=0.2V
VCE=45V, VBE=0.2V
VEB=5V, IC=0
<20
-
uA
-
<20
uA
AII
<10
nA
DC Current Gain
hFE
IC=10uA,VCE=5V
BCY58-7/59-7
BCY58-8/59-8
BCY58-9/59-9
BCY58-10/59-10
-
>20
>40
>100
Continental Device India Limited
IC=2mA,VCE=5V
BCY58-7/59-7
BCY58-8/59-8
BCY58-9/59-9
BCY58-10/59-10
Data Sheet
120-220
180-310
250-460
380-630
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