BCY56 Datasheet, PDF (1/4 Pages) Seme LAB – GENERAL PURPOSE, LOW POWER, NPN SWITCHING TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
BCY56
BCY57
TO-18
Metal Can Package
For General Purpose, Very High Gain Low Level and Low Noise Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_D
P_D
T_j, T_stg
BCY56
45
45
5
100
100
300
2
750
5
- 65 to +175
BCY57
20
25
UNIT
V
V
V
mA
mA
mW
mW/ ºC
mW
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
500
ºC/W
200
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=20V, I_E=0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
Base Emitter on Voltage
V_{BE (on)}
I_C=2mA, V_CE=5V
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=10mA, I_B=1mA
DC Current Gain
*I_C=100mA, I_B=10mA
h_FE
I_C=10µA, V_CE=5V
BCY56
BCY57
I_C=2mA, V_CE=5V
BCY56
BCY57
BCY56
BCY57
>45
>20
>45
>25
>5
<100
<100
0.6 - 0.7
Typ 0.08
Typ 0.20
UNIT
V
V
V
nA
nA
V
V
V
>40
>100
100 - 450
200 - 800
*Pulse Test: Pulse width <300µs, Duty cycle< 2%
Continental Device India Limited
Data Sheet
Page 1 of 4