BCX70G Datasheet, PDF (1/3 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX70G BCX70H
BCX70J BCX70K
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
BCX70G = AG
BCX70H = AH
BCX70J = AJ
BCX70K = AK
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (V_BE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation at T_amb = 25 °C
Junction temperature
Transition frequency at f = 100 MHz
V_CE = 5 V; I_C = 10 mA
Noise figure at f: 1 kHz
V_CE = 5 V; I_C: 200 mA; B = 200 Hz
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (V_BE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
V_CES
V_CE0
I_C
P_tot
T_j
max.
max.
max.
max.
max.
45 V
45 V
200 mA
250 mW
150 ° C
f_T
typ. 250 MHz
F
typ.
2 dB
V_CES
V_CE0
V_EB0
max.
max.
max.
45 V
45 V
5V
Continental Device India Limited
Data Sheet
Page 1 of 3