BCX41 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
BCX41
SOT-23
Formed SMD Package
1
2
MARKING
BCX41=EK
Medium Power Transistor
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CES
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Peak Pulse Current
I_CM
Continuous Collector Current
I_C
Base Current
I_B
Power Dissipation
P_tot
Operating and Storage Temperature
Range
T_j,T_stg
VALUE
125
125
5.0
1.0
800
100
330
- 55 to +150
UNITS
V
V
V
A
mA
mA
mW
ºC
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
Collector Base Cut Off Current
I_CES
V_CE=100V, V_BE=0
V_CE=100V, V_BE=0, T_amb=150ºC
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
I_CEX
I_EBO
*V_{CE (sat)}
V_CE=100V, V_BE=0.2V, T_amb=85ºC
V_CE=100V, V_BE=0.2V, T_amb=125ºC
V_EB=4V, I_C=0
I_C=300mA, I_B=30mA
Base Emitter Saturation Voltage
DC Current Gain
*V_{BE (sat)}
h_FE
I_C=300mA, I_B=30mA
I_C=100µA, V_CE=1V
*I_C=100mA, V_CE=1V
Transition Frequency
Output Capacitance
*Pulse width=300µs, duty cycle=2%
f_T
C_obO
*I_C=200mA, V_CE=1V
I_C=10mA, V_CE=5V, f=20 MHz
V_CB=10V, I_E=0, f=1MHz
MIN TYP
25
63
40
100
12
MAX
100
10
10
75
100
0.9
1.4
BCX41 Rev 240310E
UNIT
nA
µA
µA
µA
nA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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