BCX23 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – PNP SILICON AF TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
BCX23
TO-18
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCES
125
Collector -Emitter Voltage
VCEO
125
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
800
Peak
ICM
1.0
Base Current
IB
100
Power Dissipation @ Ta=25 deg C
Ptot
450
@ Tc=45 deg C Ptot
1.55
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
Thermal Resistance
Junction to Case
Rth (j-c)
100
Junction to Ambient
Rth (j-a)
390
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
UNIT
V
V
V
mA
A
mA
mW
W
deg C
K/W
K/W
MIN TYP MAX UNIT
Collector -Emitter Voltage
VCEO IC=10mA, IB=0
125 -
-
V
VCES IC=100uA, VBE=0
125
-
V
Emitter Base Voltage
VEBO IE=100uA, IC=0
5.0 -
-
V
Collector Emitter Saturation Voltage VCE(Sat) IC=300mA, IB=30mA
-
- 0.90
V
Base Emitter Saturation Voltage
VBE(Sat) IC=300mA, IB=30mA
-
- 1.4
V
Collector Cut off Current
ICES
VCE=100V, VBE=0
-
- 100
nA
Ta=150 deg C
VCE=100V, VBE=0
-
-
10
uA
Emitter Cut off Current
IEBO
VEB=4V, IC=0
-
- 100
nA
DC Current Gain
hFE
IC=100mA,VCE=1V
63 -
-
DYNAMIC CHARACTERISTICS
IC=200mA,VCE=1V
40 -
-
Transition Frequency
ft
IC=10mA, VCE=5V, f=20MHz Typ - 100 MHz
Out-Put Capacitance
Cob
VCB=10V, IE=0, f=1MHz
Typ -
12
pF
Continental Device India Limited
Data Sheet
Page 1 of 2