BCW89 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW89
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW89 = H3
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
D.C. current gain at T_j = 25 °C
–I_C = 2 mA; —V_CE = 5 V
Transition frequency at f: 35 MHz
–I_C = 10 mA; –V_CE = 5 V
Noise figure at R_S = 2 kW
–I_C = 200 mA; –V_CE = 5 V;
f = 1 kHz; B = 200 Hz
–V_CB0 max.
–V_CE0 max.
–I_CM max.
P_tot max.
T_j
max.
>
h_FE <
80 V
60 V
200 mA
250 mW
150 ° C
120
260
f_T
typ. 150 MHz
F
<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 4