BCW81 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW81
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
BCW81 = K3
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to T_amb = 25 °C
Junction temperature
D.C. current gain at T_j = 25 °C
I_C = 2 mA, V_CE = 5 V
Transition frequency at f = 35 MHz
I_C = 10 mA; V_CE = 5 V
Noise figure at R_S = 2 kΩ
I_C = 200 µA; V_CE = 5 V;
f = 1 kHz; B = 200 Hz
V_CB0
V_CE0
I_CM
P_tot
T_j
h_FE
max.
max.
max.
max.
max.
>
<
50 V
45 V
200 mA
250 mW
150 ° C
420
800
f_T
typ. 300 MHz
F
<
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 4